Microcrystalline silicon thin film transistors obtained by hot-wire CVD

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Thin-Film Transistors Obtained by Hot Wire CVD

(1) Departament d'Enginyeria Electrònica. Jordi Girona 1-3, Mòdul C4. Universitat Politècnica de Catalunya (Barcelona, Spain). (2) Departament d'Enginyeria Electrònica. Universitat Rovira i Virgili (Tarragona, Spain). (3) Departament de Física Aplicada i Òptica. Universitat de Barcelona (Barcelona, Spain) Abstract Hydrogenated microcrystalline silicon films obtained at low temperature (150oC-28...

متن کامل

Electronic Transport in Low Temperature Nanocrystalline Silicon Thin-film Transistors Obtained by Hot-wire Cvd

Hydrogenated nanocrystalline silicon obtained by Hot-Wire Chemical Vapour Deposition has been incorporated as the active layer in bottom-gate thin-film transistors. These devices were electrically characterised by measuring in vacuum the output and transfer characteristics for different temperatures. The field-effect mobility showed a thermally activated behaviour which could be attributed to p...

متن کامل

I-IV/P15 Microcrystalline Silicon Thin Film Transistors Obtained by Hot-WireCVD

Polysilicon Thin Film Transistors (TFT) are of great interest in the field of large area microelectronics, especially because of their application as active elements in Flat Panel Displays. Different deposition techniques are in tough competition with the objective to obtain device-quality polysilicon thin films at low temperature. In this paper we present the preliminary results obtained with ...

متن کامل

Amorphous-silicon thin-film transistors deposited by VHF-PECVD and hot-wire CVD

We investigate the impact of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H) thin film transistors (TFTs). It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic mechanical stress in the a-Si:H layer. We study a series of bottom-gate TFTs incorporating a-Si:H deposited by VHF PECVD and hot-wire CVD. All TFTs...

متن کامل

Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate

Amorphous and nanocrystalline silicon films obtained by Hot-Wire Chemical Vapor deposition have been incorporated as active layers in n-type coplanar top gate thin film transistors deposited on glass substrates covered with SiO2. Amorphous silicon devices exhibited mobility values of 1.3 cmVs, which are very high taking into account the amorphous nature of the material. Nanocrystalline transist...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Materials Science and Engineering: B

سال: 2000

ISSN: 0921-5107

DOI: 10.1016/s0921-5107(99)00252-4